Low Temperature Deposition SiO2 Films by SAPCVD

A Subatmospheric Pressure Chemical Vapor Deposition (SAPCVD) system was implemented for SiO2 nanometric films deposition on silicon substrates. Tetraethoxysilane (TEOS) and ozone (O3) were used as precursors and they were mixed into the SAPCVD system at 590 Torr. The deposition temperatures ranged from 140 to 265 o C and the deposition time ranged from 1 to 15 min. The measured thicknesses from the deposited SiO2 films were between 5 and 300 nm. The thin films were also characterized by FTIR spectroscopy. From the FTIR spectra the typical absorption bands of the Si-O bond were observed (asymmetric stretching, bending and rocking) and it was also observed a dependence on the vibrational modes corresponding to hydroxyl groups with the deposition temperature. Furthermore an analytical model has been evoked to determine the activation energy of the reactions in the deposit films process. Key-Words: SAPCVD; TEOS, Ozone, SiO2, Deposition rate, Low temperature.